Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, C. H. | en_US |
dc.contributor.author | Lee, C. W. | en_US |
dc.contributor.author | Yu, Y. C. | en_US |
dc.contributor.author | Lee, C. P. | en_US |
dc.date.accessioned | 2018-08-21T05:52:47Z | - |
dc.date.available | 2018-08-21T05:52:47Z | - |
dc.date.issued | 2017-10-15 | en_US |
dc.identifier.issn | 0168-583X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.nimb.2017.03.065 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/143947 | - |
dc.description.abstract | We present electrical spin injection and detection in p-type Ge channels using Ni/Al2O3/Ge on glass tunneling contacts. The entire structure is integrated on a glass substrate. We investigate the temperature dependence of the Hanle effect in a composite p-type Ge on glass (GeOG), using three-terminal configuration Hanle measurements; from these measurements, we observe spin accumulation up to room temperature. A spin signal of 0.3 V and a spin lifetime of 34 ps are obtained at room temperature. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Ion beam material modification | en_US |
dc.subject | Germanium on Insulator | en_US |
dc.subject | Direct bonding | en_US |
dc.subject | Spin injection | en_US |
dc.title | Temperature dependence of the electric and spintronic transport properties of Germanium on glass | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.nimb.2017.03.065 | en_US |
dc.identifier.journal | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | en_US |
dc.citation.volume | 409 | en_US |
dc.citation.spage | 138 | en_US |
dc.citation.epage | 142 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000413279700030 | en_US |
Appears in Collections: | Articles |