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dc.contributor.authorChen, C. H.en_US
dc.contributor.authorLee, C. W.en_US
dc.contributor.authorYu, Y. C.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2018-08-21T05:52:47Z-
dc.date.available2018-08-21T05:52:47Z-
dc.date.issued2017-10-15en_US
dc.identifier.issn0168-583Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2017.03.065en_US
dc.identifier.urihttp://hdl.handle.net/11536/143947-
dc.description.abstractWe present electrical spin injection and detection in p-type Ge channels using Ni/Al2O3/Ge on glass tunneling contacts. The entire structure is integrated on a glass substrate. We investigate the temperature dependence of the Hanle effect in a composite p-type Ge on glass (GeOG), using three-terminal configuration Hanle measurements; from these measurements, we observe spin accumulation up to room temperature. A spin signal of 0.3 V and a spin lifetime of 34 ps are obtained at room temperature. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectIon beam material modificationen_US
dc.subjectGermanium on Insulatoren_US
dc.subjectDirect bondingen_US
dc.subjectSpin injectionen_US
dc.titleTemperature dependence of the electric and spintronic transport properties of Germanium on glassen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.nimb.2017.03.065en_US
dc.identifier.journalNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSen_US
dc.citation.volume409en_US
dc.citation.spage138en_US
dc.citation.epage142en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000413279700030en_US
Appears in Collections:Articles