Temperature dependence of the electric and spintronic transport properties of Germanium on glass

doi:10.1016/j.nimb.2017.03.065

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, C. H.	en_US
dc.contributor.author	Lee, C. W.	en_US
dc.contributor.author	Yu, Y. C.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.date.accessioned	2018-08-21T05:52:47Z	-
dc.date.available	2018-08-21T05:52:47Z	-
dc.date.issued	2017-10-15	en_US
dc.identifier.issn	0168-583X	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.nimb.2017.03.065	en_US
dc.identifier.uri	http://hdl.handle.net/11536/143947	-
dc.description.abstract	We present electrical spin injection and detection in p-type Ge channels using Ni/Al2O3/Ge on glass tunneling contacts. The entire structure is integrated on a glass substrate. We investigate the temperature dependence of the Hanle effect in a composite p-type Ge on glass (GeOG), using three-terminal configuration Hanle measurements; from these measurements, we observe spin accumulation up to room temperature. A spin signal of 0.3 V and a spin lifetime of 34 ps are obtained at room temperature. (C) 2017 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Ion beam material modification	en_US
dc.subject	Germanium on Insulator	en_US
dc.subject	Direct bonding	en_US
dc.subject	Spin injection	en_US
dc.title	Temperature dependence of the electric and spintronic transport properties of Germanium on glass	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.nimb.2017.03.065	en_US
dc.identifier.journal	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS	en_US
dc.citation.volume	409	en_US
dc.citation.spage	138	en_US
dc.citation.epage	142	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000413279700030	en_US
顯示於類別：	期刊論文