標題: | Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory |
作者: | Chandrasekaran, Sridhar Simanjuntak, Firman Mangasa Tsai, Tsung-Ling Lin, Chun-An Tseng, Tseung-Yuen 資訊工程學系 電子工程學系及電子研究所 Department of Computer Science Department of Electronics Engineering and Institute of Electronics |
公開日期: | 11-九月-2017 |
摘要: | In this study, metal diffusion barrier-dependent switching polarity in ZrO2-based conducting-bridge random access memory was investigated. The device without the barrier layer (BL) exhibited nonpolar switching characteristics. However, inserting TiW BL resulted in positive reset failure. This phenomenon depends on the size and shape of the conducting bridge and also on the defects that contribute to the formation and rupture of the bridge. Consequently, the properties of the conducting bridge govern the device switching performance. Cu- and oxygen vacancy-based conducting bridge during N-Set for a device with and without the BL was proposed. The effect of the insertion of BL on the switching performance was also discussed. The absence of BL resulted in switching instability and poor nonvolatility. By contrast, a device with BL exhibited enhanced uniformity and nonvolatility, and the retention was more than 10(5) s at 200 degrees C. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.5003622 http://hdl.handle.net/11536/143968 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.5003622 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 111 |
顯示於類別: | 期刊論文 |