標題: Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
作者: Chandrasekaran, Sridhar
Simanjuntak, Firman Mangasa
Tsai, Tsung-Ling
Lin, Chun-An
Tseng, Tseung-Yuen
資訊工程學系
電子工程學系及電子研究所
Department of Computer Science
Department of Electronics Engineering and Institute of Electronics
公開日期: 11-九月-2017
摘要: In this study, metal diffusion barrier-dependent switching polarity in ZrO2-based conducting-bridge random access memory was investigated. The device without the barrier layer (BL) exhibited nonpolar switching characteristics. However, inserting TiW BL resulted in positive reset failure. This phenomenon depends on the size and shape of the conducting bridge and also on the defects that contribute to the formation and rupture of the bridge. Consequently, the properties of the conducting bridge govern the device switching performance. Cu- and oxygen vacancy-based conducting bridge during N-Set for a device with and without the BL was proposed. The effect of the insertion of BL on the switching performance was also discussed. The absence of BL resulted in switching instability and poor nonvolatility. By contrast, a device with BL exhibited enhanced uniformity and nonvolatility, and the retention was more than 10(5) s at 200 degrees C. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.5003622
http://hdl.handle.net/11536/143968
ISSN: 0003-6951
DOI: 10.1063/1.5003622
期刊: APPLIED PHYSICS LETTERS
Volume: 111
顯示於類別:期刊論文