標題: | Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer |
作者: | Liao, Shun Sing Lin, Yueh Chin Chuang, Chuan Lung Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-一月-2017 |
摘要: | In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780 degrees C, a growth time of 5 min, and with N-2/O-2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750 degrees C, growth time of 20 min, and under pure N-2 gas environment. Carrier lifetime was increased to 15.45 mu s, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells. |
URI: | http://dx.doi.org/10.1155/2017/9503857 http://hdl.handle.net/11536/143970 |
ISSN: | 1110-662X |
DOI: | 10.1155/2017/9503857 |
期刊: | INTERNATIONAL JOURNAL OF PHOTOENERGY |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |