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dc.contributor.authorTien, Ching-Hoen_US
dc.contributor.authorKuo, Chen-Haoen_US
dc.contributor.authorWuu, Dong-Singen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2018-08-21T05:52:49Z-
dc.date.available2018-08-21T05:52:49Z-
dc.date.issued2017-11-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2750704en_US
dc.identifier.urihttp://hdl.handle.net/11536/143991-
dc.description.abstractHigh-efficiency high-voltage ultraviolet light-emitting diodes (HV-UVLEDs) consisting of a 4 x 4 microcells array with an area of 61 mil x 33 mil were designed and fabricated via the electrode pattern and interconnect technique. Polymer material was used to fill trench with planarization, and interconnection technology was used for metal layer connection to address wiring defect issue. In comparison with the conventional lateral UV-LED (C-UVLED), which had 33.6% and 34.7% enhancement in the light output power and wall-plug efficiency (at 1.5 W) of the HV-UVLEDs. A 56% improvement in the external quantum efficiency droop behavior was achieved for the HV-UVLEDs when compared with that of C-UVLED. This improvement can be attributed to superior current spreading in the HV-UVLED due to its smaller microcells, which increases light-emission efficiency overall.en_US
dc.language.isoen_USen_US
dc.subjectHigh voltage (HV)en_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectultraviolet (UV)en_US
dc.titleImproved Optoelectronic Performance of High-Voltage Ultraviolet Light-Emitting Diodes Through Electrode Designsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2750704en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume64en_US
dc.citation.spage4526en_US
dc.citation.epage4531en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000413732500023en_US
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