標題: | 645-GHz InP heterojunction bipolar transistor harmonic oscillator |
作者: | Yun, J. Kim, J. Yoon, D. Rieh, J. -S. 交大名義發表 National Chiao Tung University |
關鍵字: | heterojunction bipolar transistors;harmonic oscillators;indium compounds;wide band gap semiconductors;III-V semiconductors;millimetre wave oscillators;heterojunction bipolar transistor harmonic oscillator;common-base cross-coupled topology;second harmonic signal;push-push operation;bias variation;terahertz imaging;signal source;frequency 561;5 GHz to 645;1 GHz;power 49;3 mW;InP |
公開日期: | 26-十月-2017 |
摘要: | 645-GHz signal generation with a harmonic oscillator based on a 250-nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common-base cross-coupled topology, generating a second harmonic signal through the push-push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is -17.4 dBm with a dc power dissipation of 49.3 mW (dc-to-RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source. |
URI: | http://dx.doi.org/10.1049/el.2017.2754 http://hdl.handle.net/11536/144000 |
ISSN: | 0013-5194 |
DOI: | 10.1049/el.2017.2754 |
期刊: | ELECTRONICS LETTERS |
Volume: | 53 |
起始頁: | 1475 |
結束頁: | 1476 |
顯示於類別: | 期刊論文 |