標題: Investigation of Co Thin Film as Buffer Layer Applied to Cu/Sn Eutectic Bonding and UBM With Sn, SnCu, and SAC Solders Joints
作者: Tang, Ya-Sheng
Derakhshandeh, Jaber
Kho, Yi-Tung
Chang, Yao-Jen
Slabbekoorn, John
De Preter, Inge
Vanstreels, Kris
Rebibis, Kenneth June
Beyne, Eric
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3-D integration;binary solders;fine-pitch microbumps;ultrathin buffer layer (UBL);under-bump metallization (UBM)
公開日期: 1-十一月-2017
摘要: The demand of small-feature-size, high-performance, and dense I/O density applications promotes the development of fine-pitch vertical interconnects for 3-D integration where microbumps are fabricated with Cu through-silicon via and under-bump metallization. Small dimension Cu/Sn bonding has to be developed to address the needs of increasing I/O density and shrinking pitch and size for future applications. For fine-pitch microbumps, it is important to select right UBM and solder materials to obtain lower UBM consumption, which means lower intermetallic compound (IMC) thickness. To find the best binary system material for fine-pitch microbumps with a different annealing temperature and time, we investigate the interfacial reaction and intermetallic compound morphologies of Co UBM with Sn, SnCu, and SAC solders. A thin, uniform, and single-phase IMC between solder and UBM facilitates finer pitch and more reliable microbumps development; the higher activation energies imply longer solder lifetime. Co, as an ultrathin buffer layer (UBL), is also used in Cu/Sn bonding. A comparison between Cu-Sn bonding with and without UBL is conducted. From this study, Co as UBL and UBM is explored and could be applied in semiconductor applications.
URI: http://dx.doi.org/10.1109/TCPMT.2017.2739755
http://hdl.handle.net/11536/144001
ISSN: 2156-3950
DOI: 10.1109/TCPMT.2017.2739755
期刊: IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
Volume: 7
起始頁: 1899
結束頁: 1905
顯示於類別:期刊論文