標題: | Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment |
作者: | Yuan, Fang-Yuan Deng, Ning Shih, Chih-Cheng Tseng, Yi-Ting Chang, Ting-Chang Chang, Kuan-Chang Wang, Ming-Hui Chen, Wen-Chung Zheng, Hao-Xuan Wu, Huaqiang Qian, He Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | HfO2-based RRAM;Nitridation;Endurance;Space charge limit current |
公開日期: | 26-十月-2017 |
摘要: | A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (V-o(+)) which limit electron movement through the switching layer. |
URI: | http://dx.doi.org/10.1186/s11671-017-2330-3 http://hdl.handle.net/11536/144007 |
ISSN: | 1556-276X |
DOI: | 10.1186/s11671-017-2330-3 |
期刊: | NANOSCALE RESEARCH LETTERS |
Volume: | 12 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |