標題: UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections
作者: Zhang, Zi-Hui
Chu, Chunshuang
Chiu, Ching Hsueh
Lu, Tien Chang
Li, Luping
Zhang, Yonghui
Tian, Kangkai
Fang, Mengqian
Sun, Qian
Kuo, Hao-Chung
Bi, Wengang
光電工程學系
Department of Photonics
公開日期: 1-Nov-2017
摘要: In this work, III-nitride based similar to 370 nm UVA lightemitting diodes (LEDs) grown on Si substrates are demonstrated. We also reveal the impact of the AlN composition in the AlGaN quantum barrier on the carrier injection for the studied LEDs. We find that, by properly increasing the AlN composition, both the electron and hole concentrations in the multiple quantum wells (MQWs) are enhanced. We attribute the increased electron concentration to the better electron confinement within the MQW region when increasing the AlN composition for the AlGaN barrier. The improved hole concentration in the MQW region is ascribed to the reduced hole blocking effect by the p-type electron blocking layer (p-EBL). This is enabled by the reduced density of the polarization-induced positive charges at the AlGaN last quantum barrier (LB)/p-EBL interface, which correspondingly suppresses the hole depletion at the AlGaN LB/p-EBL interface and decreases the valence band barrier height for the p-EBL. As a result, the optical power is improved. (C) 2017 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.42.004533
http://hdl.handle.net/11536/144010
ISSN: 0146-9592
DOI: 10.1364/OL.42.004533
期刊: OPTICS LETTERS
Volume: 42
起始頁: 4533
結束頁: 4536
Appears in Collections:Articles