完整後設資料紀錄
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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorLiu, Rui-Hongen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2018-08-21T05:52:53Z-
dc.date.available2018-08-21T05:52:53Z-
dc.date.issued2017-11-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2017.09.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/144059-
dc.description.abstractAs CMOS processes advanced, the integration of radio-frequency (RF) integrated circuits was increasing. In order to protect the fully-integrated RF transceiver from electrostatic discharge (ESD) damage, the transmit/receive (T/R) switch of transceiver frond-end should be carefully designed to bypass the ESD current. This work presented a technique of embedded ESD protection device to enhance the ESD capability of T/R switch. The embedded ESD protection devices of diodes and silicon-controlled rectifier (SCR) are generated between the transistors in T/R switch without using additional ESD protection device. The design procedure of RF circuits without ESD protection device can be simplified. The test circuits of 2.4-GHz transceiver frond-end with T/R switch, PA, and LNA have been integrated and implemented in nanoscale CMOS process to test their performances during RF operations and ESD stresses. The test results confirm that the embedded ESD protection devices can provide sufficient ESD protection capability and it is free from degrading circuit performances. (C) 2017 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectDiodesen_US
dc.subjectElectrostatic discharges (ESD)en_US
dc.subjectRadio-frequency (RF)en_US
dc.subjectSilicon-controlled rectifier (SCR)en_US
dc.subjectTransceiveren_US
dc.subjectTransmit/receive (T/R) switchen_US
dc.titleDesign of 2.4-GHz T/R switch with embedded ESD protection devices in CMOS processen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2017.09.005en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume78en_US
dc.citation.spage258en_US
dc.citation.epage266en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000414880200032en_US
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