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dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorLiu, Shiu-Jenen_US
dc.date.accessioned2018-08-21T05:52:54Z-
dc.date.available2018-08-21T05:52:54Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn1475-7435en_US
dc.identifier.urihttp://dx.doi.org/10.1504/IJNT.2017.087776en_US
dc.identifier.urihttp://hdl.handle.net/11536/144079-
dc.description.abstractMagnesium-doped zinc oxide (MZO) films were fabricated by pulsed-laser deposition (PLD) at various substrate temperatures (T-s). The substitution of Mg for Zn sites (Mg-Zn) in the films was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) measurements. Characteristic deep-level emissions (DLE) observed in the RTPL spectra further indicate the presence of Zn vacancies (V-Zn) in the MZO films. Moreover, it was found that the intensity of the blue emission corresponding to V-Zn increases with increasing T-s, indicating the important role played by T-s on the incorporation of Mg into ZnO matrix. Hall effect measurements reveal the p-type conduction of the MZO films grown at 400 degrees C. The p-type characteristic is attributed to the formation of nMg(Zn) - V-Zn complex which could act as acceptor for MZO films.en_US
dc.language.isoen_USen_US
dc.subjectp-typeen_US
dc.subjectZnO filmsen_US
dc.subjectphotoluminescenceen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectXPSen_US
dc.subjectpulsed-laser depositionen_US
dc.subjectPLDen_US
dc.subjectMg dopingen_US
dc.titleEffects of growth temperature on Mg-doped ZnO films fabricated by pulsed-laser depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1504/IJNT.2017.087776en_US
dc.identifier.journalINTERNATIONAL JOURNAL OF NANOTECHNOLOGYen_US
dc.citation.volume14en_US
dc.citation.spage992en_US
dc.citation.epage1000en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000415115100003en_US
Appears in Collections:Articles