標題: Effects of growth temperature on Mg-doped ZnO films fabricated by pulsed-laser deposition
作者: Fang, Hau-Wei
Juang, Jenh-Yih
Liu, Shiu-Jen
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: p-type;ZnO films;photoluminescence;X-ray photoelectron spectroscopy;XPS;pulsed-laser deposition;PLD;Mg doping
公開日期: 1-Jan-2017
摘要: Magnesium-doped zinc oxide (MZO) films were fabricated by pulsed-laser deposition (PLD) at various substrate temperatures (T-s). The substitution of Mg for Zn sites (Mg-Zn) in the films was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) measurements. Characteristic deep-level emissions (DLE) observed in the RTPL spectra further indicate the presence of Zn vacancies (V-Zn) in the MZO films. Moreover, it was found that the intensity of the blue emission corresponding to V-Zn increases with increasing T-s, indicating the important role played by T-s on the incorporation of Mg into ZnO matrix. Hall effect measurements reveal the p-type conduction of the MZO films grown at 400 degrees C. The p-type characteristic is attributed to the formation of nMg(Zn) - V-Zn complex which could act as acceptor for MZO films.
URI: http://dx.doi.org/10.1504/IJNT.2017.087776
http://hdl.handle.net/11536/144079
ISSN: 1475-7435
DOI: 10.1504/IJNT.2017.087776
期刊: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
Volume: 14
起始頁: 992
結束頁: 1000
Appears in Collections:Articles