標題: Effect of dose loss of phosphorus on capacitance-voltage characteristics of n-type poly-Si junctionless thin-film transistors
作者: Tsai, Jung-Ruey
Wen, Ting-Ting
Lin, Horng-Chih
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: dose loss;phosphorus;interface segregation;interface trap;junctionless transistor;capacitance-voltage
公開日期: 1-Jan-2017
摘要: This study examines the effects of the dose loss of phosphorus on the capacitance-voltage characteristics of an n-type polycrystalline silicon junctionless (JL) transistor using experimental, analytical and simulated analyses. It clearly demonstrates that the gate voltage increases as the doping concentration in the channel of the JL transistor decreases, maintaining constant capacitance because the depletion region is easily formed at the surface of the channel with a low doping concentration. The critical gate voltage (V-GC) is defined as the applied gate voltage that induces the gate capacitance at the kink of the C-V curve. The simulated results clearly suggest that the critical gate voltage increases linearly with the percentage of dose loss of phosphorus.
URI: http://dx.doi.org/10.1504/IJNT.2017.087782
http://hdl.handle.net/11536/144080
ISSN: 1475-7435
DOI: 10.1504/IJNT.2017.087782
期刊: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
Volume: 14
起始頁: 1066
結束頁: 1077
Appears in Collections:Articles