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dc.contributor.authorLin, Chien-Yuen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Kuan-Juen_US
dc.contributor.authorChen, Li-Huien_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorLiu, Hsi-Wenen_US
dc.contributor.authorLu, Ying-Hsinen_US
dc.contributor.authorLiao, Jin-Chienen_US
dc.contributor.authorCiou, Fong-Minen_US
dc.contributor.authorLin, Yu-Shanen_US
dc.date.accessioned2018-08-21T05:52:56Z-
dc.date.available2018-08-21T05:52:56Z-
dc.date.issued2017-12-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2017.09.052en_US
dc.identifier.urihttp://hdl.handle.net/11536/144115-
dc.description.abstractThis research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I-CP) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I-CP second hump region increases with channel length, yet is not affected by channel width. The cross-sectional view of the L-gate structure along the width direction demonstrates that a part of the poly gate area near the body contact is covered by a P+ implant, inducing a parasitic channel under the P+ poly gate. This parasitic channel leads to the abnormal Gm and I-CP hump, and such mechanism is further verified by body floating devices.en_US
dc.language.isoen_USen_US
dc.subjectTransconductanceen_US
dc.subjectCharge pumping currenten_US
dc.subjectMOSFETen_US
dc.subjectSOIen_US
dc.titleAnalysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2017.09.052en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume644en_US
dc.citation.spage41en_US
dc.citation.epage44en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000416041400008en_US
Appears in Collections:Articles