完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYeh, Chun-Chengen_US
dc.contributor.authorColis, Silviuen_US
dc.contributor.authorFioux, Philippeen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorBerling, Dominiqueen_US
dc.contributor.authorSoppera, Olivieren_US
dc.date.accessioned2018-08-21T05:52:59Z-
dc.date.available2018-08-21T05:52:59Z-
dc.date.issued2017-11-23en_US
dc.identifier.issn2196-7350en_US
dc.identifier.urihttp://dx.doi.org/10.1002/admi.201700738en_US
dc.identifier.urihttp://hdl.handle.net/11536/144132-
dc.description.abstractCobalt (II) acetate is mixed with zinc methacrylate (ZnMAA) to form a photopatternable Co-doped zinc oxide precursor. By using deep-UV (DUV) interference lithography, Co-doped ZnMAA precursor can be patterned as negative tone resist and transformed into ferromagnetic Co:ZnO films after thermal treatment. Moreover, Co:ZnO patterns as small as 300 nm line-width can be easily obtained. To have an in-depth understanding to the effect of DUV-patterning process as well as thermal annealing on Co:ZnO films derived from Co-doped ZnMAA precursor, optical, magnetic, and electrical characterizations are performed on Co:ZnO films prepared in different conditions. For the Co:ZnO film prepared without DUV-patterning, large zero-field-cooling (ZFC)-field-cooling (FC) irreversibility appears in superconducting quantum interference device measurements after vacuum annealing, indicating that Co clusters have formed inside the film. On the other hand, no ZFC-FC bifurcation can be observed for the DUV-patterned Co:ZnO film after the vacuum annealing, suggesting that the uniformity of Co ion distribution inside ZnO lattice is improved by DUV-patterning.en_US
dc.language.isoen_USen_US
dc.subjectdiluted magnetic semiconductoren_US
dc.subjectdopingen_US
dc.subjectnanostructureen_US
dc.subjectphotopatterningen_US
dc.subjectZnOen_US
dc.titleNanoscale Ferromagnetic Cobalt-Doped ZnO Structures Formed by Deep-UV Direct-Patterningen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/admi.201700738en_US
dc.identifier.journalADVANCED MATERIALS INTERFACESen_US
dc.citation.volume4en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000416253100013en_US
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