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dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorWang, Chih-Kuoen_US
dc.contributor.authorSu, Dongen_US
dc.contributor.authorAmrillah, Tahtaen_US
dc.contributor.authorHsieh, Ying-Huien_US
dc.contributor.authorWu, Kun-Hongen_US
dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorEng, Lukas M.en_US
dc.contributor.authorJen, Shien-Uangen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2018-08-21T05:52:59Z-
dc.date.available2018-08-21T05:52:59Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.6b16485en_US
dc.identifier.urihttp://hdl.handle.net/11536/144142-
dc.description.abstractA bimorph composed of ferrimagnetic cobalt ferrite (CoFe2O4, CFO) and flexible muscovite was fabricated via van der Waals epitaxy. The combination of X-ray diffraction and transmission electron microscopy was conducted to reveal the heteroepitaxy of the CFO/muscovite system. The robust magnetic behaviors against mechanical bending were characterized by hysteresis measurements and magnetic force microscopy, which maintain a saturation magnetization (M-s) of similar to 120-150 emu/cm(3) under different bending states. The large magnetostrictive response of the CFO film was then determined by digital holographic microscopy, where the difference of magnetostrction coefficient (Delta lambda) is -104 ppm. The superior performance of this bimorph is attributed to the nature of weak interaction between film and substrate. Such a flexible CFO/muscovite bimorph provides a new platform to develop next-generation flexible magnetic devices.en_US
dc.language.isoen_USen_US
dc.subjectflexible magnetic devicesen_US
dc.subjectcobalt ferrite (CoFe2O4)en_US
dc.subjectmuscovite (mica)en_US
dc.subjectvan der Waals epitaxyen_US
dc.subjectmagnetostrictionen_US
dc.titleFlexible Heteroepitaxy of CoFe2O4/Muscovite Bimorph with Large Magnetostrictionen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.6b16485en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume9en_US
dc.citation.spage7297en_US
dc.citation.epage7304en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000395494200071en_US
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