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dc.contributor.authorYoon, D.en_US
dc.contributor.authorSeo, M. -G.en_US
dc.contributor.authorSong, K.en_US
dc.contributor.authorKaynak, M.en_US
dc.contributor.authorTillack, B.en_US
dc.contributor.authorRieh, J. -S.en_US
dc.date.accessioned2018-08-21T05:53:00Z-
dc.date.available2018-08-21T05:53:00Z-
dc.date.issued2017-02-02en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el.2016.3882en_US
dc.identifier.urihttp://hdl.handle.net/11536/144153-
dc.description.abstractA 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 x 160 m(2) excluding Baluns and probing pads.en_US
dc.language.isoen_USen_US
dc.subjectdifferential amplifiersen_US
dc.subjectGe-Si alloysen_US
dc.subjectheterojunction bipolar transistorsen_US
dc.subjectsemiconductor materialsen_US
dc.subjectterahertz wave devicesen_US
dc.subjectsubmillimetre wave amplifiersen_US
dc.subjectdifferential amplifieren_US
dc.subjectsilicon germanium HBT technologyen_US
dc.subjectthree-stage differential cascade topologyen_US
dc.subjectpassive shunt transistor pairen_US
dc.subjectparasitic base inductanceen_US
dc.subjecttransistor pair amplificationen_US
dc.subjectamplifier instabilityen_US
dc.subjectbase bias voltage tuningen_US
dc.subjectshunt transistor pairen_US
dc.subjectamplifier peak gainen_US
dc.subjectDC power dissipationen_US
dc.subjectfrequency 260 GHzen_US
dc.subjectgain 15 dBen_US
dc.subjectpower 112 mWen_US
dc.subjectSiGeen_US
dc.title260-GHz differential amplifier in SiGe heterojunction bipolar transistor technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el.2016.3882en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume53en_US
dc.citation.spage194en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000395526800038en_US
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