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dc.contributor.authorYu, Ting-Yangen_US
dc.contributor.authorChi, Nai-Chenen_US
dc.contributor.authorTsai, Hsin-Chengen_US
dc.contributor.authorWang, Shiang-Yuen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2018-08-21T05:53:01Z-
dc.date.available2018-08-21T05:53:01Z-
dc.date.issued2017-12-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.42.004917en_US
dc.identifier.urihttp://hdl.handle.net/11536/144168-
dc.description.abstractTerahertz (THz) polarizers with robust structure and high transmittance are demonstrated using 3D-integrated circuit (IC) technologies. A Cu wire-grid polarizer is sealed and well protected by Si-bonded wafers through a low-temperature eutectic bonding method. Deep reactive-ion etching is used to fabricate the anti-reflection (AR) layers on outward surfaces of bonded wafers. The extinction ratio and transmittance of polarizers are between 20 dB and 33 dB, and 13 dB and 27 dB for 10 mu m and 20 mu m pitch wire-grids, respectively, and 100% at central frequency, depending on frequency and AR layer thickness. The process of polarizer fabrication is simple from mature semiconductor manufacturing techniques that lead to high yield, low cost, and potential for THz applications. (C) 2017 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleRobust terahertz polarizers with high transmittance at selected frequencies through Si wafer bonding technologiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.42.004917en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume42en_US
dc.citation.spage4917en_US
dc.citation.epage4920en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000416866600036en_US
Appears in Collections:Articles