統計資料
總造訪次數
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| Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing | 2 |
本月總瀏覽
| 五月 2024 | 六月 2024 | 七月 2024 | 八月 2024 | 九月 2024 | 十月 2024 | 十一月 2024 | |
|---|---|---|---|---|---|---|---|
| Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing | 0 | 1 | 0 | 0 | 0 | 0 | 0 |
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