統計資料
總造訪次數
| 檢視 | |
|---|---|
| Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing | 6 |
本月總瀏覽
| 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | 一月 2026 | 二月 2026 | 三月 2026 | |
|---|---|---|---|---|---|---|---|
| Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing | 0 | 0 | 0 | 0 | 0 | 2 | 0 |
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