Effect of Sputtered AlN Location on the Growth Mechanism of GaN

doi:10.1149/2.0211709jss

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Pei-Yu	en_US
dc.contributor.author	Li, Jhen-Hong	en_US
dc.contributor.author	Hsu, Lung-Hsing	en_US
dc.contributor.author	Huang, Chia-Yen	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2018-08-21T05:53:05Z	-
dc.date.available	2018-08-21T05:53:05Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.issn	2162-8769	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/2.0211709jss	en_US
dc.identifier.uri	http://hdl.handle.net/11536/144252	-
dc.description.abstract	Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail. (c) 2017 The Electrochemical Society. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Effect of Sputtered AlN Location on the Growth Mechanism of GaN	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/2.0211709jss	en_US
dc.identifier.journal	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	6	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000418363500028	en_US
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