完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Wang, Huan-Chung | en_US |
dc.contributor.author | Su, Huan-Fu | en_US |
dc.contributor.author | Luc, Quang-Ho | en_US |
dc.contributor.author | Lee, Ching-Ting | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2018-08-21T05:53:05Z | - |
dc.date.available | 2018-08-21T05:53:05Z | - |
dc.date.issued | 2017-01-01 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/2.0251711jss | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144256 | - |
dc.description.abstract | An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications. (c) The Author(s) 2017. Published by ECS. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.0251711jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 6 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000418369500027 | en_US |
顯示於類別: | 期刊論文 |