Electron Field Emission Enhancement Based on Al-Doped ZnO Nanorod Arrays With UV Exposure

Abstract

In this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/mu m in the dark and under UV light, and the enhanced field enhancement factors (beta) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.