標題: | Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers |
作者: | Hsu, Ming-Yang Lin, Gray Pan, Chien-Hung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 25-十二月-2017 |
摘要: | We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated roomtemperature lasing emissions at 1.3-mu m wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indiumtin- oxide over "PC slab-on-substrate" structure. The threshold current density per QD layer was as low as 50 A/cm(2)/layer; however, the optical output was limited to 2 mW. The bandedge lasing mode was identified and near-circular beam with narrow divergence angle less than 2 degrees was achieved. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement |
URI: | http://dx.doi.org/10.1364/OE.25.032697 http://hdl.handle.net/11536/144306 |
ISSN: | 1094-4087 |
DOI: | 10.1364/OE.25.032697 |
期刊: | OPTICS EXPRESS |
Volume: | 25 |
Issue: | 26 |
起始頁: | 32697 |
結束頁: | 32704 |
顯示於類別: | 期刊論文 |