標題: Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers
作者: Hsu, Ming-Yang
Lin, Gray
Pan, Chien-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 25-十二月-2017
摘要: We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated roomtemperature lasing emissions at 1.3-mu m wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indiumtin- oxide over "PC slab-on-substrate" structure. The threshold current density per QD layer was as low as 50 A/cm(2)/layer; however, the optical output was limited to 2 mW. The bandedge lasing mode was identified and near-circular beam with narrow divergence angle less than 2 degrees was achieved. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI: http://dx.doi.org/10.1364/OE.25.032697
http://hdl.handle.net/11536/144306
ISSN: 1094-4087
DOI: 10.1364/OE.25.032697
期刊: OPTICS EXPRESS
Volume: 25
Issue: 26
起始頁: 32697
結束頁: 32704
顯示於類別:期刊論文


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