完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLuo, Zhicongen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorYang, Tzu-Yien_US
dc.contributor.authorCheng, Wan-Hsuehen_US
dc.date.accessioned2018-08-21T05:53:09Z-
dc.date.available2018-08-21T05:53:09Z-
dc.date.issued2017-10-01en_US
dc.identifier.issn1932-4545en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TBCAS.2017.2713122en_US
dc.identifier.urihttp://hdl.handle.net/11536/144326-
dc.description.abstractA new digitally dynamic power supply technique for 16-channel 12-V-tolerant stimulator is proposed and realized in a 0.18-mu m 1.8-V/3.3-V CMOS process. The proposed stimulator uses four stacked transistors as the pull-down switch and pullup switch to withstand 4 times the nominal supply voltage (4 x VDD). With the dc input voltage of 3.3 V, the regulated threestage charge pump, which is capable of providing 11.3-V voltage at 3-mA loading current, achieves dc conversion efficiency of up to 69% with 400-pF integrated capacitance. Power consumption is reduced by implementing the regulated charge pump to provide a dynamic dc output voltage with a 0.5-V step. The proposed digitally dynamic power supply technique, which is implemented by using a p-type metal oxide semiconductor (PMOS) inverter with pulldown current source and digital controller, greatly improves the power efficiency of a system. The silicon area of the stimulator is approximately 3.5 mm(2) for a 16-channel implementation. The functionalities of the proposed stimulator have been successfully verified through animal test.en_US
dc.language.isoen_USen_US
dc.subjectDynamic power supply techniqueen_US
dc.subjecthigh-voltage-toleranten_US
dc.subjectpower efficiencyen_US
dc.subjectregulated charge pumpen_US
dc.subjectstimulatoren_US
dc.titleA Digitally Dynamic Power Supply Technique for 16-Channel 12 V-Tolerant Stimulator Realized in a 0.18-mu m 1.8-V/3.3-V Low-Voltage CMOS Processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TBCAS.2017.2713122en_US
dc.identifier.journalIEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMSen_US
dc.citation.volume11en_US
dc.citation.spage1087en_US
dc.citation.epage1096en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department生醫電子轉譯研究中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentBiomedical Electronics Translational Research Centeren_US
dc.identifier.wosnumberWOS:000419308500011en_US
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