完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Luo, Zhicong | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.contributor.author | Yang, Tzu-Yi | en_US |
dc.contributor.author | Cheng, Wan-Hsueh | en_US |
dc.date.accessioned | 2018-08-21T05:53:09Z | - |
dc.date.available | 2018-08-21T05:53:09Z | - |
dc.date.issued | 2017-10-01 | en_US |
dc.identifier.issn | 1932-4545 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TBCAS.2017.2713122 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144326 | - |
dc.description.abstract | A new digitally dynamic power supply technique for 16-channel 12-V-tolerant stimulator is proposed and realized in a 0.18-mu m 1.8-V/3.3-V CMOS process. The proposed stimulator uses four stacked transistors as the pull-down switch and pullup switch to withstand 4 times the nominal supply voltage (4 x VDD). With the dc input voltage of 3.3 V, the regulated threestage charge pump, which is capable of providing 11.3-V voltage at 3-mA loading current, achieves dc conversion efficiency of up to 69% with 400-pF integrated capacitance. Power consumption is reduced by implementing the regulated charge pump to provide a dynamic dc output voltage with a 0.5-V step. The proposed digitally dynamic power supply technique, which is implemented by using a p-type metal oxide semiconductor (PMOS) inverter with pulldown current source and digital controller, greatly improves the power efficiency of a system. The silicon area of the stimulator is approximately 3.5 mm(2) for a 16-channel implementation. The functionalities of the proposed stimulator have been successfully verified through animal test. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Dynamic power supply technique | en_US |
dc.subject | high-voltage-tolerant | en_US |
dc.subject | power efficiency | en_US |
dc.subject | regulated charge pump | en_US |
dc.subject | stimulator | en_US |
dc.title | A Digitally Dynamic Power Supply Technique for 16-Channel 12 V-Tolerant Stimulator Realized in a 0.18-mu m 1.8-V/3.3-V Low-Voltage CMOS Process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TBCAS.2017.2713122 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.spage | 1087 | en_US |
dc.citation.epage | 1096 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 生醫電子轉譯研究中心 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Biomedical Electronics Translational Research Center | en_US |
dc.identifier.wosnumber | WOS:000419308500011 | en_US |
顯示於類別: | 期刊論文 |