標題: Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate
作者: Yu, Hung Wei
Anandan, Deepak
Hsu, Ching Yi
Hung, Yu Chih
Su, Chun Jung
Wu, Chien Ting
Kakkerla, Ramesh Kumar
Minh Thien Huu Ha
Huynh, Sa Hoang
Tu, Yung Yi
Chang, Edward Yi
材料科學與工程學系
電機學院
電子工程學系及電子研究所
光電工程學系
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: InAs NWs;two-step MOCVD;LO peak;SCR;carrier concentration distribution
公開日期: 1-二月-2018
摘要: High-density (similar to 80/um(2)) vertical InAs nanowires (NWs) with small diameters (similar to 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 x 10(-5) atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 mu m(-2) to 80 mu m(-2)) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (< 40 nm) InAs NWs.
URI: http://dx.doi.org/10.1007/s11664-017-5878-x
http://hdl.handle.net/11536/144356
ISSN: 0361-5235
DOI: 10.1007/s11664-017-5878-x
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 47
起始頁: 1071
結束頁: 1079
顯示於類別:期刊論文