標題: | Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate |
作者: | Yu, Hung Wei Anandan, Deepak Hsu, Ching Yi Hung, Yu Chih Su, Chun Jung Wu, Chien Ting Kakkerla, Ramesh Kumar Minh Thien Huu Ha Huynh, Sa Hoang Tu, Yung Yi Chang, Edward Yi 材料科學與工程學系 電機學院 電子工程學系及電子研究所 光電工程學系 Department of Materials Science and Engineering College of Electrical and Computer Engineering Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | InAs NWs;two-step MOCVD;LO peak;SCR;carrier concentration distribution |
公開日期: | 1-二月-2018 |
摘要: | High-density (similar to 80/um(2)) vertical InAs nanowires (NWs) with small diameters (similar to 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 x 10(-5) atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 mu m(-2) to 80 mu m(-2)) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (< 40 nm) InAs NWs. |
URI: | http://dx.doi.org/10.1007/s11664-017-5878-x http://hdl.handle.net/11536/144356 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-017-5878-x |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 47 |
起始頁: | 1071 |
結束頁: | 1079 |
顯示於類別: | 期刊論文 |