Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shih, Cheng Wei | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Lu, Chun Fu | en_US |
dc.contributor.author | Su, Wei Fang | en_US |
dc.date.accessioned | 2018-08-21T05:53:11Z | - |
dc.date.available | 2018-08-21T05:53:11Z | - |
dc.date.issued | 2018-01-17 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/s41598-017-17066-x | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144373 | - |
dc.description.abstract | High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (mu(FE)) of 7.6 cm(2)/Vs, 140 mV/dec subthreshold slope, and 3 x 10(4) on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded mu(FE), because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole mu(FE) of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/s41598-017-17066-x | en_US |
dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
dc.citation.volume | 8 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000422716900023 | en_US |
Appears in Collections: | Articles |