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dc.contributor.authorLin, Alberten_US
dc.contributor.authorYang, Chien-Chihen_US
dc.contributor.authorParashar, Paragen_US
dc.contributor.authorLin, Chien-Yungen_US
dc.contributor.authorJian, Ding Rungen_US
dc.contributor.authorHuang, Wei-Mingen_US
dc.contributor.authorHuang, Yi-Wenen_US
dc.contributor.authorFu, Sze Mingen_US
dc.contributor.authorZhong, Yan Kaien_US
dc.contributor.authorTseng, Tseung Yuenen_US
dc.date.accessioned2018-08-21T05:53:14Z-
dc.date.available2018-08-21T05:53:14Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c7ra12113jen_US
dc.identifier.urihttp://hdl.handle.net/11536/144433-
dc.description.abstractCarbon nanotubes (CNTs) possesses decent optical properties and thus can be considered as a candidate for perfect absorbers due to their close-to-air refractive index and minimal extinction. However, weak absorption in porous materials, due to the low extinction coefficients, requires an inevitably thick absorption layer (similar to 100 mu m) for the perfect opaque absorbers. Thus, the requirement of large thicknesses of CNTs prohibits them from being used as miniaturized integrated photonic devices. Here, we propose an electrophoretic deposited (EPD) CNT resonant cavity structure on tantalum (Ta) to enhance optical absorption. Efficient random light scattering along with the resonant cavity structure using Ti/SiO2 stacking enhances the absorption in our proposed EPD-CNT film while maintaining the total device thickness to <1 mu m. The experiment results reveal that the absorption band covers the entire UV-VIS-NIR spectrum (lambda = 0.3-2.6 mu m), using resonant-cavity EPD-CNT design. The EPD deposition process is done at relatively low temperature < 120 degrees C. We believe that this proposal is very promising for sensing, antenna, and thermophotovoltaics (TPV), in terms of bandwidth, compactness and cost.en_US
dc.language.isoen_USen_US
dc.titleAn ultra-compact blackbody using electrophoretic deposited carbon nanotube filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c7ra12113jen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume8en_US
dc.citation.spage3453en_US
dc.citation.epage3461en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000423348500012en_US
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