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dc.contributor.authorLiang, Hsin-Chihen_US
dc.contributor.authorHuang, Tzu-Linen_US
dc.contributor.authorChang, Feng-Lanen_US
dc.contributor.authorSung, Cheng-Linen_US
dc.contributor.authorChen, Yung-Fuen_US
dc.date.accessioned2018-08-21T05:53:14Z-
dc.date.available2018-08-21T05:53:14Z-
dc.date.issued2018-09-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2018.2791431en_US
dc.identifier.urihttp://hdl.handle.net/11536/144441-
dc.description.abstractA new diffusion-bonded Nd: YVO4/Nd: GdVO4 hetero-structure crystal with oblique interface between two vanadate materials is exploited to achieve dual-wavelength passively mode-locked laser with a semiconductor saturable absorber mirror. Experimental results show that the power ratio of the two emission wavelengths can be flexibly adjusted by controlling the vertical position of pump beam. In the optimally balanced dual-wavelength operation, the maximum total output power of 2.5 W is obtained at an incident pump power of 11 Wand the pulse width is measured to be 24.7 ps with pulse repetition rate of 296.6 MHz. The mode-locked output pulse is further found to exhibit an optically beating with pulse duration of 1.8 ps at a repetition rate of 0.318 THz.en_US
dc.language.isoen_USen_US
dc.subjectNeodymium: solid lasersen_US
dc.subjectmode locked lasersen_US
dc.subjectdual-wavelength lasersen_US
dc.titleFlexibly Controlling the Power Ratio of Dual-Wavelength SESAM-Based Mode-Locked Lasers With Wedged-Bonded Nd: YVO4/Nd: GdVO4 Crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2018.2791431en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume24en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000423610600001en_US
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