完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liang, Hsin-Chih | en_US |
dc.contributor.author | Huang, Tzu-Lin | en_US |
dc.contributor.author | Chang, Feng-Lan | en_US |
dc.contributor.author | Sung, Cheng-Lin | en_US |
dc.contributor.author | Chen, Yung-Fu | en_US |
dc.date.accessioned | 2018-08-21T05:53:14Z | - |
dc.date.available | 2018-08-21T05:53:14Z | - |
dc.date.issued | 2018-09-01 | en_US |
dc.identifier.issn | 1077-260X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JSTQE.2018.2791431 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144441 | - |
dc.description.abstract | A new diffusion-bonded Nd: YVO4/Nd: GdVO4 hetero-structure crystal with oblique interface between two vanadate materials is exploited to achieve dual-wavelength passively mode-locked laser with a semiconductor saturable absorber mirror. Experimental results show that the power ratio of the two emission wavelengths can be flexibly adjusted by controlling the vertical position of pump beam. In the optimally balanced dual-wavelength operation, the maximum total output power of 2.5 W is obtained at an incident pump power of 11 Wand the pulse width is measured to be 24.7 ps with pulse repetition rate of 296.6 MHz. The mode-locked output pulse is further found to exhibit an optically beating with pulse duration of 1.8 ps at a repetition rate of 0.318 THz. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Neodymium: solid lasers | en_US |
dc.subject | mode locked lasers | en_US |
dc.subject | dual-wavelength lasers | en_US |
dc.title | Flexibly Controlling the Power Ratio of Dual-Wavelength SESAM-Based Mode-Locked Lasers With Wedged-Bonded Nd: YVO4/Nd: GdVO4 Crystals | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JSTQE.2018.2791431 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | en_US |
dc.citation.volume | 24 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000423610600001 | en_US |
顯示於類別: | 期刊論文 |