完整後設資料紀錄
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dc.contributor.authorCheng, Pi-Yingen_US
dc.contributor.authorLai, Po-Yingen_US
dc.contributor.authorYe, Jiun-Mingen_US
dc.contributor.authorChen, Tsung-Chiaen_US
dc.contributor.authorHsieh, Cheng-Lien_US
dc.date.accessioned2018-08-21T05:53:15Z-
dc.date.available2018-08-21T05:53:15Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2017.10.036en_US
dc.identifier.urihttp://hdl.handle.net/11536/144456-
dc.description.abstractIn recent years, palladium-coated copper (PdCu) wire has been widely used in microelectronic packaging. The electronic flame off (EFO) current setting will affect the distribution of palladium (Pd) during the free air ball (FAB) formation of PdCu wire. This study investigates the influence of EFO current settings on Pd distribution in the FAB and the bonded ball. The distribution and concentration of Pd is observed by using an electron probe micro analyzer (EPMA). Mechanical tests are used to evaluate the bond strength of the first bond. A high temperature storage test (HTST) is performed on the packaged IC at 200 degrees C for 500 h and 1000 h. The results indicate that different EFO current settings cause either complete or partial Pd coverage on FABs, which directly affects the Pd distribution at the bonded ball interface. The wire pull and ball shear tests show the bond strength decrease under three EFO current settings after HTST. This confirms that although Pd can serve as a protective layer for the bonded ball against attack from halides from within the epoxy molding compound (EMC), incomplete Pd coating and formation of the alloy may actually aggravate the corrosion on bonded ball.en_US
dc.language.isoen_USen_US
dc.subjectPd-coated Cu wireen_US
dc.subjectElectronic flame offen_US
dc.subjectPd distributionen_US
dc.subjectHigh temperature storage reliabilityen_US
dc.titleHigh temperature storage reliability of palladium coated copper wire in different EFO current settingsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2017.10.036en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume80en_US
dc.citation.spage1en_US
dc.citation.epage6en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department生物科技學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.identifier.wosnumberWOS:000423891400001en_US
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