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dc.contributor.authorWu, H. C.en_US
dc.contributor.authorChandrasekhar, K. Devien_US
dc.contributor.authorYuan, J. K.en_US
dc.contributor.authorHuang, J. R.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorBerger, H.en_US
dc.contributor.authorYang, H. D.en_US
dc.date.accessioned2019-04-03T06:35:32Z-
dc.date.available2019-04-03T06:35:32Z-
dc.date.issued2017-03-15en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.95.125121en_US
dc.identifier.urihttp://hdl.handle.net/11536/144509-
dc.description.abstractCompared to the previous report on Cu3Bi(SeO3)(2)O2X (X = Cl, Br) [V. Gnezdilov et al., (arXiv: 1604.04249)], where no dielectric anomaly was observed without magnetic field near T-N similar to 25.6K, we further present the dielectric behaviors without and with magnetic field in Cu3Bi(SeO3)(2)O2Cl. At zero field H = 0, an antiferromagnetic transition from magnetization and specific heat measurements is clearly established at T-N, while no dielectric anomaly was observed. Those results are similar to the previous report [V. Gnezdilov et al., (arXiv: 1604.04249)]. Above the critical field H-c similar to 0.8 T, a metamagnetic spin-flip transition from antiferromagnetic to ferrimagnetic order at T similar to T-N is induced anisotropically only for H broken vertical bar broken vertical bar c. Meanwhile, a ferroelectric behavior from dielectric and pyroelectric current measurements is observed below T similar to T-N; then a corresponding type-II multiferroics emerges above H-c. The key mechanism of the anisotropic spin-flip-induced multiferroicity in Cu3Bi(SeO3)(2)O2Cl can be ascribed to the breaking of magnetic twofold symmetry in the bc plane above H-c.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic spin-flip-induced multiferroic behavior in kagome Cu3Bi(SeO3)(2)O2Clen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.95.125121en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume95en_US
dc.citation.issue12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000396275100003en_US
dc.citation.woscount10en_US
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