Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Chiu, Yu Sheng | en_US |
dc.contributor.author | Luc, Quang Ho | en_US |
dc.contributor.author | Lin, Yueh Chin | en_US |
dc.contributor.author | Huang, Jui Chien | en_US |
dc.contributor.author | Dee, Chang Fu | en_US |
dc.contributor.author | Majlis, Burhanuddin Yeop | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2018-08-21T05:53:19Z | - |
dc.date.available | 2018-08-21T05:53:19Z | - |
dc.date.issued | 2017-09-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.56.094101 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144538 | - |
dc.description.abstract | A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance-voltage (C-V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (similar to 50 mV). Moreover, the interface trap density (D-it) was calculated to be 2.7 x 10(11)cm(-1)V(-1) s(-1) at 150 degrees C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46% and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-mu m-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88W/mm output power, a 23 dB power gain, a 30.2% power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28.4 as compared with that of 26.5 for the conventional GaN HEMTs. Overall, the MOS-HEMTs with a HfO2/AlN gate stack showed good potential for high-linearity RF power device applications. (C) 2017 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.7567/JJAP.56.094101 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 56 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000425246800001 | en_US |
Appears in Collections: | Articles |