完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Jie-Tingen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2018-08-21T05:53:21Z-
dc.date.available2018-08-21T05:53:21Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2018.2789819en_US
dc.identifier.urihttp://hdl.handle.net/11536/144582-
dc.description.abstractThe RC-based power-rail electrostatic discharge (ESD) clamp with nMOS of large size has been widely utilized to enhance the ESD robustness of CMOS integrated circuits. However, such circuit design that only detects the rising time of ESD pulse may be accidentally triggered in some conditions, such as fast power-ON, hot-plug, and envelope tracking applications. In this paper, a new power-rail ESD clamp circuit with transient and voltage detection function has been proposed and implemented in a 0.18-mu m 1.8-V CMOS technology. The measurement results from the silicon chip have demonstrated that the new proposed power-rail ESD clamp circuit with adjustable minimum starting voltage (V-starting) can achieve good ESD robustness and avoid triggering under fast power-ON condition. In addition, the proposed circuit has a low standby leakage current of 270 nA at 125 degrees C under normal power-ON condition.en_US
dc.language.isoen_USen_US
dc.subjectDiode stringen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectESD protectionen_US
dc.subjectpower-rail ESD clamp circuiten_US
dc.titleDesign of Power-Rail ESD Clamp With Dynamic Timing-Voltage Detection Against False Trigger During Fast Power-ON Eventsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2018.2789819en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume65en_US
dc.citation.spage838en_US
dc.citation.epage846en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000425996300004en_US
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