統計資料
總造訪次數
| 檢視 | |
|---|---|
| Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique | 2 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique | 0 | 0 | 0 | 1 | 0 | 0 | 0 |
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shanghai | 1 |