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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorHuang, Bo-Wenen_US
dc.contributor.authorZhang, Yu-Xinen_US
dc.contributor.authorWang, Shui-Jinnen_US
dc.contributor.authorHsu, Jui-Meien_US
dc.date.accessioned2018-08-21T05:53:21Z-
dc.date.available2018-08-21T05:53:21Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2018.14977en_US
dc.identifier.urihttp://hdl.handle.net/11536/144590-
dc.description.abstractAtmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 degrees C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13x10(8), saturation mobility of 10 cm(2)/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.en_US
dc.language.isoen_USen_US
dc.subjectAP-PECVDen_US
dc.subjectIGZO-TFTsen_US
dc.subjectAP-GZO Source/Drainen_US
dc.subjectGate Control Abilityen_US
dc.titleInvestigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2018.14977en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume18en_US
dc.citation.spage2054en_US
dc.citation.epage2057en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426033400087en_US
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