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dc.contributor.authorYu, Ting-Yangen_US
dc.contributor.authorLiang, Hag-Wenen_US
dc.contributor.authorChang, Yao-Jenen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2018-08-21T05:53:22Z-
dc.date.available2018-08-21T05:53:22Z-
dc.date.issued2018-08-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2018.15375en_US
dc.identifier.urihttp://hdl.handle.net/11536/144594-
dc.description.abstractAsymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.en_US
dc.language.isoen_USen_US
dc.subject3D Integrationen_US
dc.subject3D Integrated Circuit (3D-IC)en_US
dc.subjectAsymmetric Bondingen_US
dc.subjectHybrid Bondingen_US
dc.subjectInterconnecten_US
dc.subjectMicro Bumpen_US
dc.titleAsymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2018.15375en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume18en_US
dc.citation.spage5397en_US
dc.citation.epage5403en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426059800025en_US
Appears in Collections:Articles