完整後設資料紀錄
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dc.contributor.authorYoung, T.en_US
dc.contributor.authorSharma, P.en_US
dc.contributor.authorKim, D. H.en_US
dc.contributor.authorHa, Thai Duyen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorChu, Y. -H.en_US
dc.contributor.authorSeidel, J.en_US
dc.contributor.authorNagarajan, V.en_US
dc.contributor.authorYasui, S.en_US
dc.contributor.authorItoh, M.en_US
dc.contributor.authorSando, D.en_US
dc.date.accessioned2018-08-21T05:53:24Z-
dc.date.available2018-08-21T05:53:24Z-
dc.date.issued2018-02-01en_US
dc.identifier.issn2166-532Xen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5011783en_US
dc.identifier.urihttp://hdl.handle.net/11536/144648-
dc.description.abstractWe present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films similar to 50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedrallike to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.en_US
dc.language.isoen_USen_US
dc.titleStructural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5011783en_US
dc.identifier.journalAPL MATERIALSen_US
dc.citation.volume6en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000426999900002en_US
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