完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Zong-Lin | en_US |
dc.contributor.author | Chang, Bing-Hui | en_US |
dc.contributor.author | Lin, Chien-Hung | en_US |
dc.contributor.author | Lee, Chien-Ping | en_US |
dc.date.accessioned | 2018-08-21T05:53:25Z | - |
dc.date.available | 2018-08-21T05:53:25Z | - |
dc.date.issued | 2018-03-07 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.5012113 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144659 | - |
dc.description.abstract | We demonstrate dual-wavelength GaSb-based mid-infrared photonic crystal surface emitting lasers at room temperature. The two lasing peaks emitted simultaneously at 2.3 mu m and 2.22 mu m under optical pumping. Type-I InGaAsSb quantum wells were used for the active region. The photonic crystal with a rectangular lattice was fabricated on the surface to provide light coupling for laser operation. The two-wavelength operation was a result of the resonances from the two different grating periods along the two perpendicular directions of the rectangular lattice. The laser emissions from these two wavelengths were highly linearly polarized in two perpendicular directions as a result of the grating design. Published by AIP Publishing. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dual-wavelength GaSb-based mid infrared photonic crystal surface emitting lasers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.5012113 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 123 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000427104500021 | en_US |
顯示於類別: | 期刊論文 |