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dc.contributor.authorLi, Zong-Linen_US
dc.contributor.authorChang, Bing-Huien_US
dc.contributor.authorLin, Chien-Hungen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2018-08-21T05:53:25Z-
dc.date.available2018-08-21T05:53:25Z-
dc.date.issued2018-03-07en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5012113en_US
dc.identifier.urihttp://hdl.handle.net/11536/144659-
dc.description.abstractWe demonstrate dual-wavelength GaSb-based mid-infrared photonic crystal surface emitting lasers at room temperature. The two lasing peaks emitted simultaneously at 2.3 mu m and 2.22 mu m under optical pumping. Type-I InGaAsSb quantum wells were used for the active region. The photonic crystal with a rectangular lattice was fabricated on the surface to provide light coupling for laser operation. The two-wavelength operation was a result of the resonances from the two different grating periods along the two perpendicular directions of the rectangular lattice. The laser emissions from these two wavelengths were highly linearly polarized in two perpendicular directions as a result of the grating design. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleDual-wavelength GaSb-based mid infrared photonic crystal surface emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5012113en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume123en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000427104500021en_US
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