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dc.contributor.authorLiao, P. H.en_US
dc.contributor.authorPeng, K. P.en_US
dc.contributor.authorLin, H. C.en_US
dc.contributor.authorGeorge, T.en_US
dc.contributor.authorLi, P. W.en_US
dc.date.accessioned2018-08-21T05:53:27Z-
dc.date.available2018-08-21T05:53:27Z-
dc.date.issued2018-05-18en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6528/aab17ben_US
dc.identifier.urihttp://hdl.handle.net/11536/144704-
dc.description.abstractWe report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1-xGex shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1-xGex shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.en_US
dc.language.isoen_USen_US
dc.subjectMOSen_US
dc.subjectgermanium quantum doten_US
dc.subjectSiGeen_US
dc.subjectself-organizationen_US
dc.subjectchannel engineeringen_US
dc.subjectstrain engineeringen_US
dc.titleSingle-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6528/aab17ben_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume29en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000427876700001en_US
Appears in Collections:Articles