完整後設資料紀錄
DC 欄位語言
dc.contributor.authorShih, An-Cien_US
dc.contributor.authorHan, Chi-Juien_US
dc.contributor.authorKuo, Tsung-Chengen_US
dc.contributor.authorCheng, Yun-Chienen_US
dc.date.accessioned2018-08-21T05:53:27Z-
dc.date.available2018-08-21T05:53:27Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn2079-4991en_US
dc.identifier.urihttp://dx.doi.org/10.3390/nano8030164en_US
dc.identifier.urihttp://hdl.handle.net/11536/144718-
dc.description.abstractThe deposition stability and homogeneity of microparticles improved with mask, lengthened nozzle and flow rate adjustment. The microparticles can be used to encapsulate monomers, before the monomers in the microparticles can be deposited onto a substrate for nanoscale self-assembly. For the uniformity of the synthesized nanofilm, the homogeneity of the deposited microparticles becomes an important issue. Based on the ANSYS simulation results, the effects of secondary flow were minimized with a lengthened nozzle. The ANSYS simulation was also used to investigate the ring-vortex generation and why the ring vortex can be eliminated by adding a mask with an aperture between the nozzle and deposition substrate. The experimental results also showed that particle deposition with a lengthened nozzle was more stable, while adding the mask stabilized deposition and diminished the ring-vortex contamination. The effects of flow rate and pressure were also investigated. Hence, the deposition stability and homogeneity of microparticles was improved.en_US
dc.language.isoen_USen_US
dc.subjectmicroparticle depositionen_US
dc.subjectself-assemblyen_US
dc.subjecthomogeneityen_US
dc.subjectmonomer synthesisen_US
dc.subjectmasken_US
dc.titleEnhancing the Microparticle Deposition Stability and Homogeneity on Planer for Synthesis of Self-Assembly Monolayeren_US
dc.typeArticleen_US
dc.identifier.doi10.3390/nano8030164en_US
dc.identifier.journalNANOMATERIALSen_US
dc.citation.volume8en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000428106800036en_US
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