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dc.contributor.authorChang, C. H.en_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorYang, C. S.en_US
dc.date.accessioned2018-08-21T05:53:28Z-
dc.date.available2018-08-21T05:53:28Z-
dc.date.issued2009-02-02en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3079329en_US
dc.identifier.urihttp://hdl.handle.net/11536/144730-
dc.description.abstractCharacteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70 degrees for the 350-900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.en_US
dc.language.isoen_USen_US
dc.subjectantireflection coatingsen_US
dc.subjectelectron beam depositionen_US
dc.subjectindium compoundsen_US
dc.subjectnanostructured materialsen_US
dc.subjectsemiconductor growthen_US
dc.subjectsemiconductor materialsen_US
dc.titleBroadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen (Retracted article. See vol. 104, 269901, 2014)en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3079329en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000263167000014en_US
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