標題: Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition
作者: Minh Thien Huu Ha
Sa Hoang Huynh
Huy Binh Do
Tuan Anh Nguyen
Quang Ho Luc
Lee, Ching Ting
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
公開日期: 1-五月-2018
摘要: A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance-voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal-oxide semiconductor applications. (C) 2018 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.11.051202
http://hdl.handle.net/11536/144863
ISSN: 1882-0778
DOI: 10.7567/APEX.11.051202
期刊: APPLIED PHYSICS EXPRESS
Volume: 11
顯示於類別:期刊論文