標題: Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency
作者: Zhang, Zi-Hui
Chen, Sung-Wen Huang
Chu, Chunshuang
Tian, Kangkai
Fang, Mengqian
Zhang, Yonghui
Bi, Wengang
Kuo, Hao-Chung
光電工程學系
Department of Photonics
關鍵字: DUV LED;Superlattice p-EBL;Hole injection;Electron leakage;Efficiency-droop-free
公開日期: 24-四月-2018
摘要: This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.
URI: http://dx.doi.org/10.1186/s11671-018-2539-9
http://hdl.handle.net/11536/144925
ISSN: 1556-276X
DOI: 10.1186/s11671-018-2539-9
期刊: NANOSCALE RESEARCH LETTERS
Volume: 13
顯示於類別:期刊論文