完整後設資料紀錄
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dc.contributor.authorWu, Chih-Chiangen_US
dc.contributor.authorJeng, Shyr-Longen_US
dc.date.accessioned2018-08-21T05:53:37Z-
dc.date.available2018-08-21T05:53:37Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn0914-4935en_US
dc.identifier.urihttp://dx.doi.org/10.18494/SAM.2018.1746en_US
dc.identifier.urihttp://hdl.handle.net/11536/144934-
dc.description.abstractIn this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.en_US
dc.language.isoen_USen_US
dc.subjectgallium nitrideen_US
dc.subjectcascodeen_US
dc.subjectparasitic capacitanceen_US
dc.titleComparison of Parasitic Capacitances of Packaged Cascode Gallium Nitride Field-efect Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.18494/SAM.2018.1746en_US
dc.identifier.journalSENSORS AND MATERIALSen_US
dc.citation.volume30en_US
dc.citation.issue1en_US
dc.citation.spage453en_US
dc.citation.epage461en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000431392900015en_US
顯示於類別:期刊論文