标题: 100-nm IGZO Thin-Film Transistors With Film Profile Engineering
作者: Lin, Horng-Chih
Shie, Bo-Shiuan
Huang, Tiao-Yuan
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Film profile engineering (FPE);indium-gallium-zinc-oxide (IGZO);metal oxide;photoresist (PR) trimming;thin-film transistors (TFTs)
公开日期: 1-六月-2014
摘要: 100-nm indium-gallium-zinc-oxide (IGZO) thin-film transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-line-based photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al2O3 gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>10(7)) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement.
URI: http://dx.doi.org/10.1109/TED.2014.2318703
http://hdl.handle.net/11536/144953
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2318703
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
起始页: 2224
结束页: 2227
显示于类别:Articles