标题: | 100-nm IGZO Thin-Film Transistors With Film Profile Engineering |
作者: | Lin, Horng-Chih Shie, Bo-Shiuan Huang, Tiao-Yuan 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Film profile engineering (FPE);indium-gallium-zinc-oxide (IGZO);metal oxide;photoresist (PR) trimming;thin-film transistors (TFTs) |
公开日期: | 1-六月-2014 |
摘要: | 100-nm indium-gallium-zinc-oxide (IGZO) thin-film transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-line-based photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al2O3 gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>10(7)) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement. |
URI: | http://dx.doi.org/10.1109/TED.2014.2318703 http://hdl.handle.net/11536/144953 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2014.2318703 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 61 |
起始页: | 2224 |
结束页: | 2227 |
显示于类别: | Articles |