Full metadata record
DC FieldValueLanguage
dc.contributor.authorSu, Teng-Yuen_US
dc.contributor.authorMedina, Henryen_US
dc.contributor.authorChen, Yu-Zeen_US
dc.contributor.authorWang, Sheng-Wenen_US
dc.contributor.authorLee, Shao-Shinen_US
dc.contributor.authorShih, Yu-Chuanen_US
dc.contributor.authorChen, Chia-Weien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChuang, Feng-Chuanen_US
dc.contributor.authorChueh, Yu-Lunen_US
dc.date.accessioned2018-08-21T05:53:39Z-
dc.date.available2018-08-21T05:53:39Z-
dc.date.issued2018-05-09en_US
dc.identifier.issn1613-6810en_US
dc.identifier.urihttp://dx.doi.org/10.1002/smll.201800032en_US
dc.identifier.urihttp://hdl.handle.net/11536/144981-
dc.description.abstractThe formation of PtSe2-layered films is reported in a large area by the direct plasma-assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 degrees C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe2-layered film (five monolayers) exhibits a metallic behavior. A clear p-type semiconducting behavior of the PtSe2-layered film (approximate to trilayers) is observed with the average field effective mobility of 0.7 cm(2) V-1 s(-1) from back-gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe2 field effect transistor is demonstrated where the thinner PtSe2, exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe2, exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe2-layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 mu A under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles.en_US
dc.language.isoen_USen_US
dc.subjectfield effect transistorsen_US
dc.subjectlow-temperature synthesisen_US
dc.subjectmetallic to semiconductingen_US
dc.subjectplasma-assisteden_US
dc.subjectplatinum diselenideen_US
dc.subjecttransition metal dichalcogenideen_US
dc.titlePhase-Engineered PtSe2-Layered Films by a Plasma-Assisted Selenization Process toward All PtSe2-Based Field Effect Transistor to Highly Sensitive, Flexible, and Wide-Spectrum Photoresponse Photodetectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/smll.201800032en_US
dc.identifier.journalSMALLen_US
dc.citation.volume14en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000432032800016en_US
Appears in Collections:Articles