完整後設資料紀錄
DC 欄位語言
dc.contributor.authorSu, Y. C.en_US
dc.contributor.authorChiou, C. C.en_US
dc.contributor.authorMarinova, V.en_US
dc.contributor.authorLin, S. H.en_US
dc.contributor.authorBozhinov, N.en_US
dc.contributor.authorBlagoev, B.en_US
dc.contributor.authorBabeva, T.en_US
dc.contributor.authorHsu, K. Y.en_US
dc.contributor.authorDimitrov, D. Z.en_US
dc.date.accessioned2018-08-21T05:53:40Z-
dc.date.available2018-08-21T05:53:40Z-
dc.date.issued2018-05-01en_US
dc.identifier.issn0306-8919en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11082-018-1469-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/144996-
dc.description.abstractAluminum-doped zinc oxide (AZO) layers are prepared by using atomic layer deposition technique. The obtained layers possess high optical transmittance at visible and near-infrared spectral range. By varying the Al content, optimal growth compositions of AZO are established where the electrical conductivity of the film is highest. Based on performed optical and electrical characteristics measurements, selected AZO films with optimal conductivity are implemented as transparent electrodes in liquid crystal display devices. The electro-optical modulation characteristics of these devices are found to be comparable to those of devices using commercial ITO electrodes.en_US
dc.language.isoen_USen_US
dc.subjectAl-doped ZnO layersen_US
dc.subjectALD techniqueen_US
dc.subjectTransparent conductive layersen_US
dc.subjectLiquid crystal displaysen_US
dc.titleAtomic layer deposition prepared Al-doped ZnO for liquid crystal displays applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11082-018-1469-1en_US
dc.identifier.journalOPTICAL AND QUANTUM ELECTRONICSen_US
dc.citation.volume50en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000432380100006en_US
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