1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorHsu, Ming-Yangen_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorLi, Zong-Linen_US
dc.contributor.authorPan, Po-Chouen_US
dc.date.accessioned2018-08-21T05:53:40Z-
dc.date.available2018-08-21T05:53:40Z-
dc.date.issued2018-05-14en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.26.013483en_US
dc.identifier.urihttp://hdl.handle.net/11536/145003-
dc.description.abstractWe investigate threshold current temperature dependence of electrically injected quantum-dot (QD) photonic crystal (PC) surface-emitting lasers (SELs) with respect to wavelength detuning between QD gain peak and PC cavity resonance. The lasing emissions cover wavelengths from 1283 nm to 1318 nm. Almost infinite characteristic temperature is realized at certain temperature range for PCSEL with large negative gain-cavity detuning. Moreover, band-edge lasing mode is identified in our "PC slab-on-substrate" structure, and its far-field distribution is characterized as doughnut-shaped beam with azimuthal polarization. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleThreshold current temperature dependence of quantum-dot photonic crystal surface-emitting lasers with respect to gain-cavity detuningen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.26.013483en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume26en_US
dc.citation.spage13483en_US
dc.citation.epage13488en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000432457600118en_US
顯示於類別：期刊論文


相關內容
Loading...