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dc.contributor.authorChen, Yen-Chunen_US
dc.contributor.authorYeh, Hanen_US
dc.contributor.authorLee, Chien-Juen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2018-08-21T05:53:41Z-
dc.date.available2018-08-21T05:53:41Z-
dc.date.issued2018-05-16en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.8b02845en_US
dc.identifier.urihttp://hdl.handle.net/11536/145018-
dc.description.abstractTwo-dimensional (2D) semiconductors, particularly the direct-gap monolayer transition metal dichalcogenides (TMDs), are currently being developed for various atomically thin optoelectronic devices. However, practical applications are hindered by their low quantum efficiencies in light emissions and absorptions. While photonic cavities and metallic plasmonic structures can significantly enhance the light-matter interactions in TMDs, the narrow spectral resonance and the local hot spots considerably limit the applications when broadband and large area are required. Here, we demonstrate that a properly designed distributed Bragg reflector (DBR) can be an ideal platform for light-coupling enhancement in 2D TMDs. The main idea is based on engineering the amplitude and phase of optical reflection from the DBR to produce optimal substrate-induced interference. We show that the TMDs photoluminescence, Raman, and second harmonic generation signals of monolayer WSe2 can be enhanced by a factor of 26, 34, and 58, respectively. The proposed DBR substrates pave the way for developing a range of 2D optoelectronic devices for broadband and large-area applications.en_US
dc.language.isoen_USen_US
dc.subjecttransition metal dichalcogenideen_US
dc.subjecttwo-dimensional layered materialsen_US
dc.subjectsubstrate interferenceen_US
dc.subjectphotoluminescenceen_US
dc.subjectRamanen_US
dc.titleDistributed Bragg Reflectors as Broadband and Large-Area Platforms for Light-Coupling Enhancement in 2D Transition-Metal Dichalcogenidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.8b02845en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume10en_US
dc.citation.spage16874en_US
dc.citation.epage16880en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000432753800073en_US
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