Full metadata record
DC FieldValueLanguage
dc.contributor.authorTai, Y. -H.en_US
dc.contributor.authorLiu, H. -W.en_US
dc.contributor.authorChan, P. -C.en_US
dc.contributor.authorChiu, S. -L.en_US
dc.date.accessioned2018-08-21T05:53:41Z-
dc.date.available2018-08-21T05:53:41Z-
dc.date.issued2018-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2018.2821170en_US
dc.identifier.urihttp://hdl.handle.net/11536/145025-
dc.description.abstractThis letter investigated the time response behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under negative gate bias and illumination stress (NBIS) in sub-seconds. For the first time, significant degradation even in periods as short as sub-seconds under NBIS was observed. The stretchedexponential behavior of threshold voltage shift (Delta Vth) revealed similar mechanisms for short-and long-term NBIS. As a-IGZO TFTs operate at a very high speed, the non-negligible Delta Vth owing to the influence of fast oxygen vacancy needs to be considered to ensure a-IGZO TFT circuits function well in real applications.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous indium gallium zinc oxide (a-IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjectnegative bias and illumination stress (NBIS)en_US
dc.titleDegradation of a-IGZO Thin-Film Transistors Under Negative Bias and Illumination Stress in the Time Span of a Few Secondsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2018.2821170en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume39en_US
dc.citation.spage696en_US
dc.citation.epage698en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000432990700013en_US
Appears in Collections:Articles