Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tai, Y. -H. | en_US |
dc.contributor.author | Liu, H. -W. | en_US |
dc.contributor.author | Chan, P. -C. | en_US |
dc.contributor.author | Chiu, S. -L. | en_US |
dc.date.accessioned | 2018-08-21T05:53:41Z | - |
dc.date.available | 2018-08-21T05:53:41Z | - |
dc.date.issued | 2018-05-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2018.2821170 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145025 | - |
dc.description.abstract | This letter investigated the time response behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under negative gate bias and illumination stress (NBIS) in sub-seconds. For the first time, significant degradation even in periods as short as sub-seconds under NBIS was observed. The stretchedexponential behavior of threshold voltage shift (Delta Vth) revealed similar mechanisms for short-and long-term NBIS. As a-IGZO TFTs operate at a very high speed, the non-negligible Delta Vth owing to the influence of fast oxygen vacancy needs to be considered to ensure a-IGZO TFT circuits function well in real applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Amorphous indium gallium zinc oxide (a-IGZO) | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.subject | negative bias and illumination stress (NBIS) | en_US |
dc.title | Degradation of a-IGZO Thin-Film Transistors Under Negative Bias and Illumination Stress in the Time Span of a Few Seconds | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2018.2821170 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.spage | 696 | en_US |
dc.citation.epage | 698 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000432990700013 | en_US |
Appears in Collections: | Articles |